Attributes

Key Value
@Ic (test) (A)3.0
@VCE (test)6.0
CaseTO3
Collector Capacitance (.350 pF
Derate Above 25?C1.0
Forward Current Transfe.50
Ic Max. (A)10
Icbo Max. @Vcb Max. (A)1.0m
ManufacturerDiscrete Semiconductor .
Mat.Silicon Logic
Max. Operating Junction.150 ?C
Max. PD (W)175
Maximum Collector Curre.10 A
Maximum Collector Power.125 W
Maximum Collector-Base .525 V
Maximum Collector-Emitt.475 V
Maximum Emitter-Base Vo.6 V
Min hFE300
Oper. Temp (?C) Max.200
Pinout Equivalence Numb.3-14
PolarityNPN
SKU79935
Surface Mounted Yes/NoNO
t(f) Max. (S)15u
t(stor) Max. (S)15u
Transition Frequency (f.4 MHz
TypeTransistor Silicon NPN
Vbr CEO400
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