Infineon Technologies IPB023N04NGATMA1

mpnIPB023N04NGATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	90A (Tc)
Drain to Source Voltage.	40 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	120 nC @ 10 V
Input Capacitance (Ciss.	10000 pF @ 20 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-263-3, D?Pak (2 Lead.
Part Status	Obsolete
Power Dissipation (Max)	167W (Tc)
Rds On (Max) @ Id, Vgs	2.3mOhm @ 90A, 10V
Series	OptiMOS?
Supplier Device Package	PG-TO263-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 95?A

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