Attributes

Key Value
Base Product NumberIXFT30
CategoryDiscrete Semiconductor .
Current - Continuous Dr.30A (Tc)
Drain to Source Voltage.500 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .62 nC @ 10 V
Input Capacitance (Ciss.3200 pF @ 25 V
MfrIXYS
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-268-3, D?Pak (2 Lead.
Power Dissipation (Max)690W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs200mOhm @ 15A, 10V
SeriesHiPerFET?, Q3 Class
Supplier Device PackageTO-268AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id6.5V @ 4mA
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