Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.120A (Tc)
DescriptionPFET, 120A I(D), 55V, 0.
Detailed DescriptionN-Channel 55 V 120A (Tc.
Digi-Key Part Number2156-BUK662R7-55C118-ND
Drain to Source Voltage.55 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .258 nC @ 10 V
Input Capacitance (Ciss.15300 pF @ 25 V
ManufacturerNXP USA Inc.
Manufacturer Product Nu.BUK662R7-55C,118
MfrNXP USA Inc.
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)306W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs2.7mOhm @ 25A, 10V
SeriesAutomotive, AEC-Q101, T.
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?16V
Vgs(th) (Max) @ Id2.8V @ 1mA
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