ON SEMICONDUCTOR NTP6412ANG MOSFET Transistor (1 piece)

ON SEMICONDUCTOR NTP6412ANG MOSFET Transistor (1 piece)zoom

Attributes

Key Value
Base Product NumberNTP6412
BrandON Semiconductor
CategoryDiscrete Semiconductor .
Channel ModeChannel Mode
Channel TypeChannel Type
Current - Continuous Dr.58A (Tc)
DescriptionMOSFET N-CH 100V 58A TO.
Detailed DescriptionN-Channel 100 V 58A (Tc.
Digi-Key Part NumberNTP6412ANGOS-ND
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .100 nC @ 10 V
Height15.75mm
Input Capacitance (Ciss.3500 pF @ 25 V
Length10.28mm
Manufactureronsemi
Manufacturer Product Nu.NTP6412ANG
Manufacturer Standard L.74 Weeks
Maximum Continuous Drai.58 A
Maximum Drain Source Re.18.2 m?
Maximum Drain Source Vo.100 V
Maximum Gate Source Vol.Maximum Gate Source Vol.
Maximum Gate Threshold .4V
Maximum Operating Tempe.+175 ?C
Maximum Power Dissipati.167 W
Mfronsemi
Minimum Operating Tempe.-55 ?C
Mounting TypeThrough Hole
Number of Elements per .1
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Package TypeTO-220
Pin CountPin Count
Power Dissipation (Max)167W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs18.2mOhm @ 58A, 10V
Series-
StockStock
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Transistor ConfigurationSingle
Transistor MaterialTransistor Material
Typical Gate Charge @ V.Typical Gate Charge @ V.
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
Width4.82mm

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Future Electronics16598461.008501000ON Semiconductor1.008 @ 50
HotendaH18243911.51453ON Semiconductor1.5 @ 25
thumbzoomRS Delivers145-33381.6985025ON Semiconductor1.698 @ 50
thumbzoomNewark63R45891.7125025ONSEMI1.71 @ 100
thumbzoomDigi-Key22715792.328125onsemi2.328 @ 25
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