VISHAY SILICONIX SI4490DY-T1-E3 N CHANNEL MOSFET, 200V, 4A, SOIC

mpnSI4490DY-T1-E3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

VISHAY SILICONIX SI4490DY-T1-E3 N CHANNEL MOSFET, 200V, 4A, SOIC

VISHAY SILICONIX SI4490DY-T1-E3 N CHANNEL MOSFET, 200V, 4A, SOIC

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PackageQuantity: 1
Manufacturer: VISHAY SILICONIX
Label: VISHAY SILICONIX

Attributes

Key	Value
Base Product Number	SI4490
Category	Discrete Semiconductor .
Current - Continuous Dr.	2.85A (Ta)
Drain to Source Voltage.	200 V
Drive Voltage (Max Rds .	6V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	42 nC @ 10 V
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-SOIC (0.154", 3.90mm .
Power Dissipation (Max)	1.56W (Ta)
Product Status	Active
Rds On (Max) @ Id, Vgs	80mOhm @ 4A, 10V
Series	TrenchFET?
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2V @ 250?A (Min)

All Prices

Img	Seller	Supplier SKU	Min Price	MOQ	In Stock	Lead Time	Brand	Weight	Preferred Tier
	Freelance Electronics	SI4490DY-T1-E3	0.35	1	5		Vishay		0.35 @ 5
	Hotenda	H1810440	0.71145	1	2500		Vishay/Siliconix		0.71145 @ 5
	Future Electronics	9803388	0.876	2500	2500		Vishay		0.876 @ 2500
	Newark	29X0537	1.4	2500	5		VISHAY		1.4 @ 2000
	Arrow	SI4490DY-T1-E3	1.594	1	942		Vishay		1.594 @ 5
	Mouser	781-SI4490DY-T1-E3	1.98	1	1933		Vishay		1.98 @ 5
	Digi-Key	1656450	2.645	1	5		Vishay Siliconix		2.645 @ 5

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