Vishay Siliconix SI4490DY-T1-E3

mpnSI4490DY-T1-E3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Base Product Number	SI4490
Category	Discrete Semiconductor .
Current - Continuous Dr.	2.85A (Ta)
Drain to Source Voltage.	200 V
Drive Voltage (Max Rds .	6V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	42 nC @ 10 V
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-SOIC (0.154", 3.90mm .
Part Status	Active
Power Dissipation (Max)	1.56W (Ta)
Rds On (Max) @ Id, Vgs	80mOhm @ 4A, 10V
Series	TrenchFET?
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2V @ 250?A (Min)

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