Attributes

Key Value
Base Product NumberSIA430
CategoryDiscrete Semiconductor .
Current - Continuous Dr.12A (Tc)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .18 nC @ 10 V
Input Capacitance (Ciss.800 pF @ 10 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? SC-70-6
Power Dissipation (Max)3.5W (Ta), 19.2W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs13.5mOhm @ 7A, 10V
SeriesTrenchFET?
Supplier Device PackagePowerPAK? SC-70-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 250?A
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