SILICONIX (VISHAY) SIR410DP-T1-GE3

mpnSIR410DP-T1-GE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

SILICONIX (VISHAY) SIR410DP-T1-GE3 N-Channel 20 V 4.8 m? 41 nC Surface Mount TrenchFET Mosfet -PowerPAKSO-8 - 3000 item(s)

SILICONIX (VISHAY) SIR410DP-T1-GE3 N-Channel 20 V 4.8 m? 41 nC Surface Mount TrenchFET Mosfet -PowerPAKSO-8 - 3000 item(s)

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Brand: SILICONIX (VISHAY)
PartNumber: SIR410DP-T1-GE3
Model: SIR410DP-T1-GE3
PackageQuantity: 1
Manufacturer: SILICONIX (VISHAY)
Label: SILICONIX (VISHAY)

Attributes

Key	Value
Base Product Number	SIR410
Category	Discrete Semiconductor .
Current - Continuous Dr.	35A (Tc)
Drain to Source Voltage.	20 V, 20V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	41 nC @ 10 V, 41nC @ 10V
Input Capacitance (Ciss.	1600pF @ 10V, 1600 pF @.
Manufacturer	VISHAY
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	PowerPAK? SO-8
Part Status	Active
Power Dissipation (Max)	4.2W (Ta), 36W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	4.8mOhm @ 20A, 10V
Series	TrenchFET?
Supplier Device Package	PowerPAK? SO-8
Technology	MOSFET (Metal Oxide)
Type of transistor	N-MOSFET
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.5V @ 250?A

All Prices

Img	Seller	Supplier SKU	Min Price	MOQ	In Stock	Lead Time	Brand	Weight	Preferred Tier
	Hotenda	H1813583	0.434	1	25		Vishay/Siliconix		0.434 @ 25
	Newark	15R4878	0.487	3000	25		VISHAY		0.487 @ 2000
	us.rs-online.com	70963093	0.56	3000	25		Siliconix / Vishay		0.56 @ 3000
	TME	SIR410DP-T1-GE3	0.744	3000	25		VISHAY		0.744 @ 3000
	Win Source	SIR410DP-T1-GE3	0.968	52	242		Vishay		0.968 @ 52
	Future Electronics	5106153	1.02	1	3000		Vishay		1.02 @ 25
	Digi-Key	3232723	1.2072	1	25		Vishay Siliconix		1.2072 @ 25

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