Attributes

Key Value
Base Product NumberSQJ444
CategoryDiscrete Semiconductor .
Current - Continuous Dr.60A (Tc)
Drain to Source Voltage.40 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .80 nC @ 10 V
Input Capacitance (Ciss.5000 pF @ 25 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? SO-8
Part StatusActive
Power Dissipation (Max)68W (Tc)
Rds On (Max) @ Id, Vgs3.2mOhm @ 10A, 10V
SeriesAutomotive, AEC-Q101, T.
Supplier Device PackagePowerPAK? SO-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A
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