Infineon IPP023N04NGXKSA1

mpnIPP023N04NGXKSA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

INFINEON IPP023N04NGXKSA1 Single N-Channel 40 V 2.3 mOhm 90 nC OptiMOS Power Mosfet - TO-220-3 - 500 item(s)

INFINEON IPP023N04NGXKSA1 Single N-Channel 40 V 2.3 mOhm 90 nC OptiMOS Power Mosfet - TO-220-3 - 500 item(s)

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Brand: Infineon
PartNumber: IPP023N04NGXKSA1
Model: IPP023N04NGXKSA1
PackageQuantity: 1
Binding: Tools & Home Improvement
Manufacturer: INFINEON
Label: INFINEON

Attributes

Key	Value
Base Product Number	IPP023
Case	PG-TO220-3
Category	Discrete Semiconductor .
Current - Continuous Dr.	90A (Tc)
Drain current	90A
Drain to Source Voltage.	40 V
Drain-source voltage	40V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	120 nC @ 10 V
Gate-source voltage	?20V
Input Capacitance (Ciss.	10000 pF @ 20 V
Kind of channel	enhanced
Kind of package	tube
Manufacturer	INFINEON TECHNOLOGIES
Mfr	INFINEON TECHNOLOGIES
Mounting	THT
Mounting Type	Through Hole
On-state resistance	2.3m?
Operating Temperature	-55?C ~ 175?C (TJ)
Package	tube
Package / Case	TO-220-3
Polarisation	unipolar
Power dissipation	167W
Power Dissipation (Max)	167W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	2.3mOhm @ 90A, 10V
Series	OptiMOS?
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide), O.
Type of transistor	N-MOSFET
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 95?A

All Prices

Img	Seller	Supplier SKU	Min Price	MOQ	In Stock	Lead Time	Brand	Weight	Preferred Tier
	RS Delivers	124-8802	1.176	1	25		Infineon		1.176 @ 25
	Future Electronics	5064717	1.692	500	25		Infineon		1.692 @ 500
	TME	IPP023N04NGXKSA1	1.893	1	25		INFINEON TECHNOLOGIES		1.893 @ 25
	Newark	39AH8922	2.12	1	1447		INFINEON		2.12 @ 25
	Digi-Key	2081134	3.106	1	25		Infineon Technologies		3.106 @ 25

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