Attributes

Key Value
Base Product NumberFDFME3
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.8A (Ta)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .2.5V, 4.5V
FET FeatureSchottky Diode (Isolate.
FET TypeN-Channel
Gate Charge (Qg) (Max) .1.4 nC @ 4.5 V
Input Capacitance (Ciss.75 pF @ 15 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case6-UFDFN Exposed Pad
Part StatusObsolete
Power Dissipation (Max)1.4W (Ta)
Rds On (Max) @ Id, Vgs299mOhm @ 1.6A, 4.5V
SeriesPowerTrench?
Supplier Device Package6-MicroFET (1.6x1.6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?12V
Vgs(th) (Max) @ Id1.5V @ 250?A
prev


As an Amazon Associate I earn from qualifying purchases.

1759641790.8791