Attributes

Key Value
@Ic (test) (A)3.0
@VCE (test)6.0
CaseTO3
Collector Capacitance (.350 pF
Derate Above 25?C1.0
Forward Current Transfe.1000
Ic Max. (A)50
Icbo Max. @Vcb Max. (A)1.0m
ManufacturerMotorola Semiconductor
Mat.Silicon Logic
Max. Operating Junction.200 ?C
Max. PD (W)125
Maximum Collector Curre.50 A
Maximum Collector Power.125 W
Maximum Collector-Base .300 V
Maximum Collector-Emitt.200 V
Maximum Emitter-Base Vo.7 V
Min hFE300
Oper. Temp (?C) Max.200
Pinout Equivalence Numb.4-100
PolarityNPN
SKU610638
Surface Mounted Yes/NoNO
t(f) Max. (S)15u
t(stor) Max. (S)15u
Transition Frequency (f.4 MHz
TypeTransistor Silicon NPN
Vbr CEO200
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