mpn
IRFBA90N20DPBF
brand
name: International Rectifier
manufacturer
name: International Rectifier
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
98A (Tc)
Drain to Source Voltage.
200 V
Drive Voltage (Max Rds .
10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
240 nC @ 10 V
Input Capacitance (Ciss.
6080 pF @ 25 V
Mfr
International Rectifier
Mounting Type
Through Hole
Operating Temperature
-55?C ~ 175?C (TJ)
Package
Bulk
Package / Case
TO-273AA
Part Status
Active
Power Dissipation (Max)
650W (Tc)
Rds On (Max) @ Id, Vgs
23mOhm @ 59A, 10V
Series
HEXFET?
Supplier Device Package
SUPER-220? (TO-273AA)
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?30V
Vgs(th) (Max) @ Id
5V @ 250?A