Attributes

Key Value
@Ic (test) (A)300m
@VCE (V)10
CaseTO220
Derate Above 25?C320m
Forward Current Transfe.30
Ic Max. (A)1.0
Icbo Max. @Vcb Max. (A)1.0m
ManufacturerST Microelectronics - S.
Max. hFE150
Max. Operating Junction.150 ?C
Max. PD (W)2.0
Maximum Collector Curre.1 A
Maximum Collector Power.40 W
Maximum Collector-Base .400 V
Maximum Collector-Emitt.300 V
Maximum Emitter-Base Vo.5 V
Min hFE30
Oper. Temp (?C) Max.140
Pinout Equivalence Numb.3-15
PolarityNPN
SKU80213
Surface Mounted Yes/NoNO
t(f) Max. (S)2.0u-+
Tr Max. (s)200n-
Trans. Freq (Hz) Min.10M
Transition Frequency (f.10 MHz
TypeTransistor Silicon NPN
Vbr CBO400
Vbr CEO300
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