Toshiba Semiconductor and Storage TK39A60W,S4VX

mpnTK39A60W,S4VX
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	10V
Drain to Source Voltage.	110 nC @ 10 V
Drive Voltage (Max Rds .	65mOhm @ 19.4A, 10V
FET Feature	50W (Tc)
FET Type	MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .	4100 pF @ 300 V
Mfr	Toshiba Semiconductor a.
Mounting Type	TO-220SIS
Operating Temperature	Through Hole
Package	Active
Package / Case	600 V
Part Status	N-Channel
Power Dissipation (Max)	150?C (TJ)
Rds On (Max) @ Id, Vgs	3.7V @ 1.9mA
Series	Tube
Supplier Device Package	TO-220-3 Full Pack
Technology	38.8A (Ta)
Vgs (Max)	-
Vgs(th) (Max) @ Id	?30V

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