Toshiba Semiconductor and Storage TPH1R403NL,L1Q

mpnTPH1R403NL,L1Q
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	TPH1R403
Category	Discrete Semiconductor .
Current - Continuous Dr.	60A (Ta)
Drain to Source Voltage.	30 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	46 nC @ 10 V
Input Capacitance (Ciss.	4400 pF @ 15 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-PowerVDFN
Power Dissipation (Max)	1.6W (Ta), 64W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	1.4mOhm @ 30A, 10V
Series	U-MOSVIII-H
Supplier Device Package	8-SOP Advance (5x5)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.3V @ 500?A

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