Vishay ARNEW43K8583GT227

B00MMYD73E

VISHAY SILICONIX SI2325DS-T1-E3 P CH MOSFET, -150V, 690mA, TO-236 (1 piece)

VISHAY SILICONIX SI2325DS-T1-E3 P CH MOSFET, -150V, 690mA, TO-236 (1 piece)zoom

Attributes

Key Value
Base Product NumberSI2325
CaseSOT23
CategoryDiscrete Semiconductor .
Current - Continuous Dr.530mA (Ta)
DescriptionMOSFET P-CH 150V 530MA .
Detailed DescriptionP-Channel 150 V 530mA (.
Digi-Key Part NumberSI2325DS-T1-E3TR-ND - T.
Drain current-0.53A
Drain to Source Voltage.150 V
Drain-source voltage-150V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeP-Channel
Gate charge12nC
Gate Charge (Qg) (Max) .12 nC @ 10 V
Gate-source voltage?20V
Input Capacitance (Ciss.510 pF @ 25 V
Kind of channelenhanced
Kind of packagereel,
ManufacturerVishay Siliconix, VISHAY
Manufacturer Product Nu.SI2325DS-T1-E3
Manufacturer Standard L.17 Weeks
MfrVishay Siliconix
MountingSMD
Mounting TypeSurface Mount
On-state resistance1.2?
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23.
Polarisationunipolar
Power dissipation0.48W
Power Dissipation (Max)750mW (Ta)
Product StatusActive
Pulsed drain current-1.6A
Rds On (Max) @ Id, Vgs1.2Ohm @ 500mA, 10V
SeriesTrenchFET?
Supplier Device PackageSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Type of transistorP-MOSFET
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH18069180.406160000Vishay/Siliconix0.406 @ 3000
thumbzoomNewark73W94090.45630003000VISHAY0.456 @ 3000
thumbzoomDigi-Key16563510.51156132363Vishay Siliconix0.51156 @ 3000
Future Electronics88029360.53430009000Vishay0.534 @ 3000
thumbzoomTMESI2325DS-T1-E30.5913000VISHAY0.59 @ 3000
RS Delivers710-32631.22413000Vishay1.224 @ 3000
AmazonTPB00MMYD73E5.99130002VISHAY5.99 @ 3000
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