Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.380mA (Ta)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .1.8V, 5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .0.4 nC @ 4.5 V
Input Capacitance (Ciss.28.5 pF @ 30 V
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
Package / CaseTO-236-3, SC-59, SOT-23.
Part StatusActive
Power Dissipation (Max)370mW (Ta)
Rds On (Max) @ Id, Vgs2Ohm @ 50mA, 5V
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id1V @ 250?A
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