Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.5.5A (Ta)
DescriptionN-CHANNEL POWER MOSFET
Detailed DescriptionN-Channel 100 V 5.5A (T.
Digi-Key Part Number2156-HUF75631SK8-ND
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .79 nC @ 20 V
Input Capacitance (Ciss.1225 pF @ 25 V
ManufacturerFairchild Semiconductor
Manufacturer Product Nu.HUF75631SK8
MfrFairchild Semiconductor
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / Case8-SOIC (0.154", 3.90mm .
Power Dissipation (Max)2.5W (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs39mOhm @ 5.5A, 10V
SeriesUltraFET?
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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