Infineon Technologies IRFS7762PBF

mpnIRFS7762PBF
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	85A (Tc)
Drain to Source Voltage.	75V
Drive Voltage (Max Rds .	6V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	130nC @ 10V
Input Capacitance (Ciss.	4.44pF @ 25V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tube
Package / Case	TO-263-3, D?Pak (2 Lead.
Part Status	Obsolete
Power Dissipation (Max)	140W (Tc)
Rds On (Max) @ Id, Vgs	6.7mOhm @ 51A, 10V
Series	HEXFET?
Supplier Device Package	D?PAK (TO-263AB)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.7V @ 100?A

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