Microsemi IRE Division JANTX2N6764

mpnJANTX2N6764
brandname: Microsemi IRE Division
manufacturername: Microsemi IRE Division

Attributes

Key	Value
Categories	Discrete Semiconductor.
Current - Continuous Dr.	38A (Tc)
Drain to Source Voltage.	100V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	125nC @ 10V
Input Capacitance (Ciss.	-
Lead Free Status / RoHS.	Contains lead / RoHS n.
Manufacturer	Microsemi IRE Division
Manufacturer Part Number	JANTX2N6764
Moisture Sensitivity Le.	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package / Case	TO-204AE
Packaging	Bulk Pack
Power Dissipation (Max)	4W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs	65 mOhm @ 38A, 10V
Series	Military, MIL-PRF-1950.
Standard Package	1
Supplier Device Package	TO-3
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4V @ 250?A

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