NXP USA Inc. PSMN6R0-30YLB,115

mpnPSMN6R0-30YLB,115
brandname: NXP USA Inc.
manufacturername: NXP USA Inc.

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	71A (Tc)
Drain to Source Voltage.	30V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	19nC @ 10V
Input Capacitance (Ciss.	1.088pF @ 15V
Mfr	NXP USA Inc.
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Bulk
Package / Case	SC-100, SOT-669
Part Status	Active
Power Dissipation (Max)	58W (Tc)
Rds On (Max) @ Id, Vgs	6.5mOhm @ 20A, 10V
Series	-
Supplier Device Package	LFPAK56, Power-SO8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	1.95V @ 1mA

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