mpn
RW1A025APT2CR
brand
name: ROHM Semiconductor
manufacturer
name: ROHM Semiconductor
Attributes
Key
Value
Channel Mode
Enhancement
Forward Diode Voltage
1.2V
Height
0.6mm
In-stock
24000
Length
1.7mm
Life Cycle
Production
Marking Code
SD
Maximum Drain Source Re.
180 m?
Maximum Gate Source Vol.
+8 V
Maximum Gate Threshold .
1V
Maximum Operating Tempe.
+150 ?C
Maximum Power Dissipati.
700 mW
Minimum Gate Threshold .
0.3V
Number of Elements per .
1
Package/Case
WEMT6
Product Categories
Transistors - FETs, MOS.
RoHs Status
Lead free / RoHS Compli.
Series
RW1A025AP
Transistor Configuration
Single
Typical Gate Charge @ V.
16 nC @ 4.5 V
Width
1.4mm