- mpnSI4532ADYT1E3
- brandname: SILICONIX
- manufacturername: SILICONIX
VISHAY SILICONIX SI4532ADY-T1-E3 DUAL N/P CHANNEL MOSFET, 30V, SOIC (10 pieces)
- PartNumber: SI4532ADY-T1-E3
- PackageQuantity: 10
- Manufacturer: VISHAY
- Label: VISHAY
Attributes
| Key | Value |
|---|
| Channel Type | N, P |
| Configuration | Dual Gate, Dual Source,. |
| Dimensions | 5 x 4 x 1.55 mm |
| Drain Current | -3, 3.7 A |
| Drain to Source On Resi. | 0.075, 0.135 ? |
| Drain to Source Voltage | -30, 30 V |
| Forward Transconductance | 5, 11 S |
| Forward Voltage, Diode | 0.8/-0.82 V |
| Gate to Source Voltage | ?20 V |
| Height | 0.061" (1.55mm) |
| Junction to Ambient The. | 110/105 ?C/W |
| Length | 0.196" (5mm) |
| Maximum Operating Tempe. | +150 ?C |
| Minimum Operating Tempe. | -55 ?C |
| Mounting Type | Surface Mount |
| Number of Elements per . | 2 |
| Number of Pins | 8 |
| Operating Temperature | -55 to 150 ?C |
| Package Type | SO-8 |
| Polarization | N-Channel and P-Channel |
| Power Dissipation | 1.13, 1.2 W |
| Series | SI45 Series |
| Temperature Operating R. | -55 to +150 ?C |
| Total Gate Charge | 8/10 nC |
| Turn Off Delay Time | 21, 23 ns |
| Turn On Delay Time | 8, 12 ns |
| Typical Gate Charge @ V. | 10 nC @ 10 V, 8 nC @ 10. |
| Voltage, Breakdown, Dra. | 30/-30 V |
| Width | 0.157" (4mm) |
All Prices
| Img | Seller | Supplier SKU | Min Price | MOQ | In Stock | Lead Time | Brand | Weight | Preferred Tier |
|---|
| us.rs-online.com | 70026111 | 0.65 | 1 | 10 | | Siliconix / Vishay | | 0.65 @ 10 |