Attributes

Key Value
Base Product NumberSTFI10N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10A (Tc)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .42 nC @ 10 V
Input Capacitance (Ciss.1180 pF @ 25 V
MfrSTMicroelectronics
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-262-3 Full Pack, I?P.
Part StatusObsolete
Power Dissipation (Max)35W (Tc)
Rds On (Max) @ Id, Vgs1Ohm @ 3.6A, 10V
SeriesSuperMESH3?
Supplier Device PackageI2PAKFP (TO-281)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4.5V @ 100?A
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