Attributes

Key Value
Current - Continuous Dr.200A (Tc)
Drain to Source Voltage.40V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .141nC @ 10V
Input Capacitance (Ciss.11500pF @ 25V
Lead Free Status / RoHS.RoHS Compliant
Manufacturer Part NumberSTH410N4F7-2AG
Manufacturer Standard L.37 Weeks
Mounting TypeSurface Mount
Operating Temperature-55
Package / CaseTO-263-3, D
PackagingReel
Power Dissipation (Max)365W (Tc)
Rds On (Max) @ Id, Vgs1.1mOhm @ 90A, 10V
SeriesAutomotive, AEC-Q101, S.
Standard Package1,000
Supplier Device PackageH2Pak-2
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 250
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