Toshiba Semiconductor and Storage TK31N60W5,S1VF

mpnTK31N60W5,S1VF
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	10V
Drain to Source Voltage.	105 nC @ 10 V
Drive Voltage (Max Rds .	99mOhm @ 15.4A, 10V
FET Feature	230W (Tc)
FET Type	MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .	3000 pF @ 300 V
Mfr	Toshiba Semiconductor a.
Mounting Type	TO-247
Operating Temperature	Through Hole
Package	Active
Package / Case	600 V
Part Status	N-Channel
Power Dissipation (Max)	150?C (TJ)
Rds On (Max) @ Id, Vgs	4.5V @ 1.5mA
Series	Tube
Supplier Device Package	TO-247-3
Technology	30.8A (Ta)
Vgs (Max)	-
Vgs(th) (Max) @ Id	?30V

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