Attributes

Key Value
Base Product NumberSUM40014
CategoryDiscrete Semiconductor .
Current - Continuous Dr.200A (Tc)
Drain to Source Voltage.40 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .275 nC @ 10 V
Input Capacitance (Ciss.15780 pF @ 20 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-7, D?Pak (6 Lead.
Power Dissipation (Max)375W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs0.99Ohm @ 20A, 10V
Series-
Supplier Device PackageTO-263-7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.4V @ 250?A
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