Attributes

Key Value
Base Product NumberDMN1019
CategoryDiscrete Semiconductor .
Current - Continuous Dr.9.3A (Ta)
Drain to Source Voltage.12 V
Drive Voltage (Max Rds .1.2V, 2.5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .50.6 nC @ 8 V
Input Capacitance (Ciss.2426 pF @ 10 V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23.
Part StatusActive
Power Dissipation (Max)680mW (Ta)
Rds On (Max) @ Id, Vgs10mOhm @ 9.7A, 4.5V
Series-
Supplier Device PackageSC-59-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?8V
Vgs(th) (Max) @ Id800mV @ 250?A
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