Infineon IRFR9120NPBF

mpnIRFR9120NPBF
brandname: Infineon
manufacturername: Infineon

Attributes

Key	Value
Channel Type	P
Configuration	Dual Drain
Dimensions	6.73 x 6.22 x 2.39 mm
Drain Current	-6.6 A
Drain to Source On Resi.	0.48 Ohms
Drain to Source Voltage	-100 V
Forward Transconductance	1.4 S
Forward Voltage, Diode	-1.6 V
Gate to Source Voltage	?20 V
Height	0.094" (2.39mm)
Input Capacitance	350 pF @ -25 V
Length	0.264 in
Maximum Operating Tempe.	+150 ?C
Minimum Operating Tempe.	-55 ?C
Mounting Type	Surface Mount
Number of Elements per .	1
Number of Pins	3
Package Type	DPAK
Polarization	P-Channel
Power Dissipation	40 W
Product Header	Hexfet? Power MOSFET
Series	HEXFET Series
Temperature Operating R.	-55 to +150 ?C
Total Gate Charge	27 nC
Turn Off Delay Time	28 ns
Turn On Delay Time	14 ns
Typical Gate Charge @ V.	Maximum of 27 nC @ -10 V
Voltage, Breakdown, Dra.	-100 V
Width	0 in

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