Infineon Technologies BSP129E6327T

mpnBSP129E6327T
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	350mA (Ta)
Drain to Source Voltage.	240 V
Drive Voltage (Max Rds .	0V, 10V
FET Feature	Depletion Mode
FET Type	N-Channel
Gate Charge (Qg) (Max) .	5.7 nC @ 5 V
Input Capacitance (Ciss.	108 pF @ 25 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-261-4, TO-261AA
Part Status	Discontinued at Digi-Key
Power Dissipation (Max)	1.8W (Ta)
Rds On (Max) @ Id, Vgs	6Ohm @ 350mA, 10V
Series	SIPMOS?
Supplier Device Package	PG-SOT223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	1V @ 108?A

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