Attributes

Key Value
Base Product NumberIRFR9120
CategoryDiscrete Semiconductor .
Current - Continuous Dr.6.6A (Tc)
Drain to Source Voltage.100 V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .27 nC @ 10 V
Input Capacitance (Ciss.350 pF @ 25 V
MfrInternational Rectifier
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)40W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs480mOhm @ 3.9A, 10V
SeriesHEXFET?
Supplier Device PackagePG-TO252
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
prev


As an Amazon Associate I earn from qualifying purchases.

1759680914.5362