Attributes

Key Value
Base Product NumberIXFN36
CategoryDiscrete Semiconductor .
Current - Continuous Dr.36A (Tc)
Drain to Source Voltage.1100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .350 nC @ 10 V
Input Capacitance (Ciss.23000 pF @ 25 V
MfrIXYS
Mounting TypeChassis Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseSOT-227-4, miniBLOC
Part StatusActive
Power Dissipation (Max)1000W (Tc)
Rds On (Max) @ Id, Vgs240mOhm @ 500mA, 10V
SeriesHiPerFET?, Polar
Supplier Device PackageSOT-227B
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id6.5V @ 1mA
© 2025 · Data Alchemy · Version 60 · ts:1760052239
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