mpn
BUK6E3R2-55C,127
brand
name: Nexperia USA Inc.
manufacturer
name: Nexperia USA Inc.
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
120A (Tc)
Drain to Source Voltage.
55 V
Drive Voltage (Max Rds .
10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
258 nC @ 10 V
Input Capacitance (Ciss.
15300 pF @ 25 V
Mfr
Nexperia USA Inc.
Mounting Type
Through Hole
Operating Temperature
-55?C ~ 175?C (TJ)
Package
Tube
Package / Case
TO-262-3 Long Leads, I?.
Power Dissipation (Max)
306W (Tc)
Product Status
Obsolete
Rds On (Max) @ Id, Vgs
3.2mOhm @ 25A, 10V
Series
Automotive, AEC-Q101, T.
Supplier Device Package
I2PAK
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?16V
Vgs(th) (Max) @ Id
2.8V @ 1mA