Attributes

Key Value
Base Product NumberIPD33CN10
CategoryDiscrete Semiconductor .
Current - Continuous Dr.27A (Tc)
DescriptionMOSFET N-CH 100V 27A TO.
Detailed DescriptionN-Channel 100 V 27A (Tc.
Digi-Key Part NumberIPD33CN10NGATMA1TR-ND -.
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .24 nC @ 10 V
Input Capacitance (Ciss.1570 pF @ 50 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.IPD33CN10NGATMA1
Manufacturer Standard L.40 Weeks
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)58W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs33mOhm @ 27A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 29?A
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