mpn
SPP80N10L
brand
name: Infineon Technologies
manufacturer
name: Infineon Technologies
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
80A (Tc)
Drain to Source Voltage.
100 V
Drive Voltage (Max Rds .
4.5V, 10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
240 nC @ 10 V
Input Capacitance (Ciss.
4540 pF @ 25 V
Mfr
Infineon Technologies
Mounting Type
Through Hole
Operating Temperature
-55?C ~ 175?C (TJ)
Package
Tube
Package / Case
TO-220-3
Part Status
Obsolete
Power Dissipation (Max)
250W (Tc)
Rds On (Max) @ Id, Vgs
14mOhm @ 58A, 10V
Series
SIPMOS?
Supplier Device Package
PG-TO220-3-1
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?20V
Vgs(th) (Max) @ Id
2V @ 2mA