Attributes

Key Value
Base Product NumberNP60N06
CategoryDiscrete Semiconductor .
Current - Continuous Dr.60A
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .56 nC @ 10 V
Input Capacitance (Ciss.3600 pF @ 25 V
MfrRenesas Electronics Ame.
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)105W
Product StatusActive
Rds On (Max) @ Id, Vgs12mOhm @ 30A, 10V
SeriesAutomotive, AEC-Q101
Supplier Device PackageTO-263-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A
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