B00R3E9U34

Microsemi JANTX2N5415 Bipolar (BJT) Transistor PNP 200V 1A 750mW Through Hole to-5 New Lot Quantity-1

Attributes

Key Value
Current - Collector (Ic.1 A
Current - Collector Cut.1mA
DC Current Gain (hFE) (.30 @ 50mA, 10V
Frequency - Transition-
MfrMicrosemi IRE Division
Mounting TypeThrough Hole
NotificationQPL or Military Specs a.
Operating Temperature-65?C ~ 200?C (TJ)
Package / CaseTO-205AA, TO-5-3 Metal .
Part StatusActive
Power - Max750 mW
Supplier Device PackageTO-5
Transistor TypePNP
Vce Saturation (Max) @ .2V @ 5mA, 50mA
Voltage - Collector Emi.200 V

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
thumbzoomDigi-Key1086-15525-ND17.241In StockMicrosemi IRE Division17.24 @ 1
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