Attributes

Key Value
Channel TypeN
ConfigurationDual Drain
Dimensions10.67 x 4.83 x 9.02 mm
Drain Current59 A
Drain to Source On Resi.18 mOhms
Drain to Source Voltage100 V
Forward Transconductance35 S
Forward Voltage, Diode1.3 V
Gate to Source Voltage?20 V
Height0.355" (9.02mm)
Input Capacitance2900 pF @ 25 V
Length0.42 in
Maximum Operating Tempe.+175 ?C
Minimum Operating Tempe.-55 ?C
Mounting TypeThrough Hole
Number of Elements per .1
Number of Pins3
Package TypeTO-220AB
PolarizationN-Channel
Power Dissipation160 W
Product HeaderHexfet? Power MOSFET
SeriesHEXFET Series
Temperature Operating R.-55 to +175 ?C
Total Gate Charge82 nC
Turn Off Delay Time41 ns
Turn On Delay Time17 ns
Typical Gate Charge @ V.82 nC @ 10 V
Voltage, Breakdown, Dra.100 V
Width0 in
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