Attributes

Key Value
Base Product NumberIXTP8
CategoryDiscrete Semiconductor .
Current - Continuous Dr.8A (Tc)
DescriptionMOSFET N-CH 650V 8A TO2.
Detailed DescriptionN-Channel 650 V 8A (Tc).
Digi-Key Part NumberIXTP8N65X2-ND
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .12 nC @ 10 V
Input Capacitance (Ciss.800 pF @ 25 V
ManufacturerIXYS
Manufacturer Product Nu.IXTP8N65X2
Manufacturer Standard L.55 Weeks
MfrIXYS
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)150W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs500mOhm @ 4A, 10V
SeriesUltra X2
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 250?A
prev


As an Amazon Associate I earn from qualifying purchases.

1759723268.8796