Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.2.2A (Tj)
Drain to Source Voltage.20V
FET FeatureSchottky Diode (Isolate.
FET TypeP-Channel
Gate Charge (Qg) (Max) .6nC @ 4.5V
Input Capacitance (Ciss.300pF @ 10V
MfrON Semiconductor
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / Case8-SMD, Flat Lead
Part StatusObsolete
Power Dissipation (Max)1.1W (Tj)
Rds On (Max) @ Id, Vgs155mOhm @ 2.2A, 4.5V
Series-
Supplier Device PackageChipFET?
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?12V
Vgs(th) (Max) @ Id1.2V @ 250?A
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