mpn
RD3L07BATTL1
brand
name: Rohm Semiconductor
manufacturer
name: Rohm Semiconductor
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
70A (Ta)
Drain to Source Voltage.
60 V
Drive Voltage (Max Rds .
4.5V, 10V
FET Feature
-
FET Type
P-Channel
Gate Charge (Qg) (Max) .
105 nC @ 10 V
Input Capacitance (Ciss.
6700 pF @ 30 V
Mounting Type
Surface Mount
Operating Temperature
150?C (TJ)
Package / Case
TO-252-3, DPak (2 Leads.
Part Status
Active
Power Dissipation (Max)
101W (Ta)
Rds On (Max) @ Id, Vgs
12.7mOhm @ 70A, 10V
Supplier Device Package
TO-252
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?20V
Vgs(th) (Max) @ Id
2.5V @ 1mA