Attributes

Key Value
Base Product NumberIRLU110
CategoryDiscrete Semiconductor .
Current - Continuous Dr.4.3A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .4V, 5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .6.1 nC @ 5 V
Input Capacitance (Ciss.250 pF @ 25 V
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-251-3 Short Leads, I.
Power Dissipation (Max)2.5W (Ta), 25W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs540mOhm @ 2.6A, 5V
Series-
Supplier Device PackageTO-251AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?10V
Vgs(th) (Max) @ Id2V @ 250?A
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