Attributes

Key Value
Base Product NumberIPD30N03
CategoryDiscrete Semiconductor .
Current - Continuous Dr.30A (Tc)
DescriptionMOSFET N-CH 30V 30A TO2.
Detailed DescriptionN-Channel 30 V 30A (Tc).
Digi-Key Part NumberIPD30N03S4L14ATMA1TR-ND.
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .14 nC @ 10 V
Input Capacitance (Ciss.980 pF @ 25 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.IPD30N03S4L14ATMA1
Manufacturer Standard L.52 Weeks
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)31W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs13.6mOhm @ 30A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO252-3-11
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?16V
Vgs(th) (Max) @ Id2.2V @ 10?A
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