mpn
IRFB61N15DPBF
brand
name: Infineon Technologies
manufacturer
name: Infineon Technologies
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
60A (Tc)
Drain to Source Voltage.
150 V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
140 nC @ 10 V
Input Capacitance (Ciss.
3470 pF @ 25 V
Mfr
Infineon Technologies
Mounting Type
Through Hole
Operating Temperature
-55?C ~ 175?C (TJ)
Package
Bulk
Package / Case
TO-220-3
Power Dissipation (Max)
2.4W (Ta), 330W (Tc)
Product Status
Active
Rds On (Max) @ Id, Vgs
32mOhm @ 36A, 10V
Series
HEXFET?
Supplier Device Package
TO-220AB
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?30V
Vgs(th) (Max) @ Id
5.5V @ 250?A