Infineon Technologies IRFS3307PBF

mpnIRFS3307PBF
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	120A (Tc)
Drain to Source Voltage.	75 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	180 nC @ 10 V
Input Capacitance (Ciss.	5150 pF @ 50 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tube
Package / Case	TO-263-3, D?Pak (2 Lead.
Part Status	Obsolete
Power Dissipation (Max)	200W (Tc)
Rds On (Max) @ Id, Vgs	6.3mOhm @ 75A, 10V
Series	HEXFET?
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 150?A

As an Amazon Associate I earn from qualifying purchases.

1759751389.3098