Attributes

Key Value
CaseSO8
Drain-source voltage-400V
Gate-source voltage?20V
Kind of channelenhanced
ManufacturerMICROCHIP TECHNOLOGY
MountingSMD
On-state resistance15?
Polarisationunipolar
Power dissipation740mW
Pulsed drain current-0.7A
Type of transistorP-MOSFET
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