Infineon Technologies IRFU15N20DPBF

mpnIRFU15N20DPBF
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	17A (Tc)
Drain to Source Voltage.	200 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	41 nC @ 10 V
Input Capacitance (Ciss.	910 pF @ 25 V
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tube
Package / Case	TO-251-3 Short Leads, I.
Part Status	Obsolete
Power Dissipation (Max)	110W (Tc)
Rds On (Max) @ Id, Vgs	165mOhm @ 10A, 10V
Series	HEXFET?
Supplier Device Package	IPAK (TO-251AA)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	5.5V @ 250?A

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