Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.120A (Tc)
Drain to Source Voltage.80 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .169 nC @ 10 V
Input Capacitance (Ciss.12030 pF @ 25 V
MfrNexperia USA Inc.
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Part StatusObsolete
Power Dissipation (Max)349W (Tc)
Rds On (Max) @ Id, Vgs4mOhm @ 25A, 10V
SeriesAutomotive, AEC-Q101, T.
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 1mA
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